| http://www.w3.org/ns/prov#value | - To be more specific, in the case where nMOS transistors are formed on the surface of the buried oxide film 2 in such a manner as to be adjacent to each other, the impurity layer 121 contains an n-type impurity such as phosphorus at a concentration of about 1???1017 to 1???102/cm3, and in the case where pMOS transistors are adjacent to each other, the impurity layer 121 contains a p-type impurity s
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