| http://www.w3.org/ns/prov#value | - However, if there is a memory cell, in which a short circuit is electrically established between the control gate and the substrate, the positive boosted potential VPPW for a batch writing operation and the negative boosted potential VPPE for a batch erasing operation can not be outputted, so that the writing and erasing operations for other memory cells can not be carried out in a predetermined p
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