| http://www.w3.org/ns/prov#value | - However, if not too many electrons are injected on to the floating gate, e.g. a charge of approximately 10???17 Coulombs, or approximately 100 electrons for a floating gate having a bottom surface area of approximately 10???10 cm2 in the device of the present invention having an ultra thin tunnel gate oxide, they can not escape back to the silicon substrate since there are no available states in t
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