| http://www.w3.org/ns/prov#value | - At first, a thin film such as SiO2, SiNx, lamination of SiO2/SiNx is formed on a single crystalline silicon wafer 300 using the (110) surface as the principal plane by a method such as a thermal oxidation method, a plasma CVD (chemical vapor deposition) method, or a sputtering method.
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