| http://www.w3.org/ns/prov#value | - FIGS. 6A to 6C are views showing the MOS gate Schottky tunnel transistor according to still another embodiment of the present invention in which the second semiconductor layer 9 is surrounded by Schottky metal 7, a n-type area 12 and the first semiconductor layer 8 so that the MOS gate Schottky tunnel transistors can easily be insulated against and separated from each other; and FIG. 6A is a gener
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