| http://www.w3.org/ns/prov#value | - According to the above mentioned characteristics, the electrostatic chucking device according to the present invention is the most advantageous of the above three examples as an electrostatic chucking device for treating a semiconductor wafer covered with insulating film, such as SiO2 or Si3 N4 films, and also facilities manufacturing the device since the structure of the device is simple.
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