| http://www.w3.org/ns/prov#value | - Concerning the resistive element, the resist is patterned such that it remains on a portion of the resistive element other than a portion to be used as a contact. [0111] Then, as in the second embodiment, the SiN film 8 is used as a mask to etch the control gate layer and the ONO film by anisotropic etching, and the resist is removed.
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