| http://www.w3.org/ns/prov#value | - nal N.V.Thin metal films by atomic layer deposition: tungsten nucleation layer over a silicon wafer; copper film from CuCl and triethylboron; vapor phase pulses in inert gasUS7491430Jul 14, 2005Feb 17, 2009Tokyo Electron LimitedDeposition method for forming a film including metal, nitrogen and carbonUS7494908May 15, 2007Feb 24, 2009Applied Materials, Inc.Apparatus for integration of barrier layer
|
