| http://www.w3.org/ns/prov#value | - BRIEF DESCRIPTION OF THE DRAWINGS [0015]FIG. 1 is a partial side view of a wafer cross section (including a substrate) prior to the formation of shallow trench isolation regions in the substrate according to the present invention; [0016]FIG. 2 is a partial side view of the wafer in FIG. 1 whereby a resist layer defines the locations and dimensions of shallow trench isolation regions that are to be
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