| http://www.w3.org/ns/prov#value | - BRIEF DESCRIPTION OF THE DRAWINGS [0017]FIG. 1A is a sectional side view illustrating an unprocessed silicon penetration device 10 a, that is, the device prior to applying the methods of the present invention; [0018]FIG. 1B is a sectional side view illustrating a silicon penetration device 10 b after formation of a silicon oxide layer 12 b on the top and bottom surfaces thereof; [0019]FIG. 1C is a
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