| http://www.w3.org/ns/prov#value | - The growth substrate 10 may include at least one from among an insulating material, a conductive material, and a semiconductor material such as sapphire (Al2O3), silicon carbide (SiC), gallium nitride (GaN), gallium arsenic (GaAs), silicon (Si), germanium (Ge), zinc oxide (ZnO), magnesium oxide (MgO), aluminum nitride (AlN), boron nitride (BN), gallium phosphide (GaP), indium phosphide (InP), lith
|
