| http://www.w3.org/ns/prov#value | - The resist 31 is selectively removed such that other areas other than an area where a diode is formed are exposed, and an implantation with BF2 + ions, indicated by reference numeral 32, is performed at an implantation angle of 45 degrees at an implantation energy of 60 keV at a dose of 6E12 atoms/cm2, to form a p-type layer 33 (see FIG. 11b).
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