| http://www.w3.org/ns/prov#value | - Patent US8173526 - Method for providing a nanoscale, high electron mobility transistor (HEMT ... - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More ??Sign inAdvanced Patent SearchPatentsVarious embodiments include forming a silicon-germanium layer over a substrate of a device; forming a layer in the silicon-germanium layer, the layer including at least one of boron and carbon; a
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