| http://www.w3.org/ns/prov#value | - A method for forming the oxide film over the surface of the amorphous semiconductor film is not particularly limited, and the oxide film may be formed by treating the surface of the amorphous semiconductor film with ozone water or an oxidizing solution such as a hydrogen peroxide solution, or may be formed by using a method for generating ozone by ultraviolet ray irradiation in an oxygen atmospher
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