About: http://webisa.webdatacommons.org/454837170

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http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	FIG. 2 is a graph of the simulated improvement in drive current of a PMOS transistor with a polysilicon gate and SiGe stress enhancement vs the amorphization depth and proximity to the gate dielectric according to this invention.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com