| http://www.w3.org/ns/prov#value | - Initially, a base insulating film 401 including an insulating film such as a silicon oxide film, a silicon nitride film or a silicon oxynitride film is formed over a substrate 400 as shown in FIG. 11A. As a material of the substrate 400, a glass substrate, a quartz substrate, a semiconductor substrate, a metal substrate or a plastic substrate is used.
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