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  • e, including the steps of defining a window 13 on the substrate; creating inside the...http://www.google.com/patents/US6165265?utm_source=gb-gplus-sharePatent US6165265 - Method of deposition of a single-crystal silicon regionAdvanced Patent SearchPublication numberUS6165265 APublication typeGrantApplication numberUS 09/237,378Publication dateDec 26, 2000Filing dateJan 26, 1999Priority dateJan 30,
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