| http://www.w3.org/ns/prov#value | - If this condition is satisfied, when the epitaxial silicon film 212 grows, the epitaxial silicon film 212 grows in a <100> direction (in a direction perpendicular to the semiconductor substrate 200) after a facet face of the epitaxial silicon film 212 touches the stopper 209, which can avoid problems such as a short circuit caused by the formation of the facet.
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