| http://www.w3.org/ns/prov#value | - With the hardmask mandrel 60 and tunnel barrier of the magneto resistive device patterned, as illustrated in FIG. 3, a blanket dielectric layer 72 such as SiN, Al2O3, or other material that can be deposited at a temperature compatible with back end processing and can be removed with a directional etch, is conformally deposited on the wafer as shown in FIG. 4.
|
