{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/101943924"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "More particularly, the present invention is a method of fabricating a semiconductor device of the type having a plurality of active layers that includes the steps set forth in FIG. 7 of first forming a layout for at least one of the active layers where the layout contains a plurality of active region segments and a plurality of inactive regions." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/137300572"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/101943924" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/82032298"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/101943924"] } } }
