{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/105620019"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "To be more specific, in the case where nMOS transistors are formed on the surface of the buried oxide film 2 in such a manner as to be adjacent to each other, the impurity layer 121 contains an n-type impurity such as phosphorus at a concentration of about 1???1017 to 1???102/cm3, and in the case where pMOS transistors are adjacent to each other, the impurity layer 121 contains a p-type impurity s" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.fr" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/163438654"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/105620019"] } } }
