{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/106170248"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "More specifically described, preparation of precursor solutions for the thin ferroelectric film include: dissolving a starting material such as an alkoxide or a salt of each of the metals constituting the thin ferroelectric film into a suitable solvent, for example, an organic solvent such as hexane and 2-ethylhexanate; optionally heating to a temperature of about 100 to 120??? C. for promoting th" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com.au" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/454175487"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/106170248"] } } }
