{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/prov/311419040"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/108251821" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/310033532"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/108251821" ] } },

    { "id" : "http://webisa.webdatacommons.org/108251821"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "1, 2010Sony CorporationMemory element and memory device comprising memory layer positioned between first and second electrodesUS7791058Jun 25, 2009Sep 7, 2010Micron Technology, Inc.Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabricationUS7791924Jun 29, 2006Sep 7, 2010Electronics And Telecommunications Research InstituteMe" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/91241894"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/108251821"] } } }
