{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/142009196"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "Also, a high dielectric constant material is generally associated with a narrow band gap, which offers less resistance to current flow and allows increased leakage current, thereby degrading interface properties as compared with silicon oxide, and causing electrical instability and other problems." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.co.uk" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/229120972"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/142009196"] } } }
