{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/prov/311419040"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/143459343" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/310033532"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/143459343" ] } },

    { "id" : "http://webisa.webdatacommons.org/143459343"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "with switching glass layerUS8030636Aug 2, 2010Oct 4, 2011Micron Technology, Inc.Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabricationUS8062536Mar 22, 2010Nov 22, 2011United Microelectronics Corp.High density plasma chemical vapor deposition processUS8080816Dec 3, 2009Dec 20, 2011Micron Technology, Inc.Silver-selenide/ch" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/91241894"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/143459343"] } } }
