{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/152334743"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "Multiple-channel non-planar transistor 200 is encapsulated in an insulating media, or interlayer dielectric (ILD) 222 as shown in FIG. 2A. In an embodiment of the present invention, the ILD is a material having a low dielectric constant, such as a film with high porosity or a film of carbon-doped oxide." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/412923563"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/152334743"] } } }
