{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/1546727"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "A sixth method for producing the semiconductor memory device according to the present invention is a method for producing the semiconductor memory device which is provided with a semiconductor substrate having a principal plane, an inter-layer insulation film which is formed on the principal plane of the semiconductor substrate and has an aperture that reaches the principal plane of the semiconduc" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/137300572"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/1546727"] } } }
