{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/158571532"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "formed for the resist layer 22, is processed using the thus formed resist pattern as a mask, and may be made of a given substrate or film such as semiconductor substrate for any purpose." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "patents.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/148525431"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/158571532"] } } }
