{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/prov/516270467"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/179265208" ] } },

    { "id" : "http://webisa.webdatacommons.org/179265208"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "The IC device of claim 11, each CMOS transistor current source including a CMOS transistor characterized by a ratio W/L, where W is a gate width and L is a gate length, wherein W/L of the CMOS transistor in the first differential section is less than W/L of the CMOS transistor in the second differential section." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/131843318"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/179265208"] } } }
