{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/184401507"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "Accordingly, there is a drawback in that the operational reliability of the MIS transistor with the laminated gate insulating film deteriorates regardless of whether the P channel MIS transistor is provided with a thin or thick silicon nitride film." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/462817085"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/184401507"] } } }
