{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/prov/137300572"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/228348603" ] } },

    { "id" : "http://webisa.webdatacommons.org/228348603"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "One embodiment of the present invention is a method for manufacturing a semiconductor device including steps of performing sputtering treatment with plasma on surfaces of source and drain electrode layers and forming an oxide semiconductor layer containing In, Ga, and Zn successively over the source and drain electrode layers without exposure of the source and drain electrode layers to air." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com"] } } }
