{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/247434643"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "Much of the difficulty in creating such devices has been due to the lack of appropriate materials; however, the development of the group III-nitrides (III-N), including materials such as GaN and AlGaN, has provided a solution to this dilemma." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "ncsu.edu" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/296198300"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/247434643" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/329992662"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/247434643"] } } }
