{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/prov/311419040"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/26143539" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/310033532"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/26143539" ] } },

    { "id" : "http://webisa.webdatacommons.org/26143539"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "ibution for PCRAMUS755147312 Oct 200723 Jun 2009Macronix International Co., Ltd.Programmable resistive memory with diode structureUS755414417 Abr 200630 Jun 2009Macronix International Co., Ltd.Memory device and manufacturing methodUS756072329 Ago 200614 Jul 2009Micron Technology, Inc.Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and metho" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.es" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/91241894"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/26143539"] } } }
