{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/266418528"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "Another aspect of the present invention is a method of manufacturing a semiconductor device, which method comprises forming a tunnel oxide layer on a channel region in a semiconductor substrate; forming a polysilicon floating gate on the tunnel oxide layer, depositing a silicon dioxide layer on the floating gate at a first thickness; depositing a silicon nitride layer on the silicon dioxide layer" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/137300572"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/266418528"] } } }
