{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/267357749"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "In order to solve the above problem, a method for producing a silicon epitaxial wafer according to an embodiment of the present invention is a method for producing a silicon epitaxial wafer by growing a silicon epitaxial layer by vapor phase growth on a main surface of a silicon wafer placed on a susceptor by using a vapor phase deposition apparatus comprising: a reaction chamber; the susceptor wh" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/137300572"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/267357749"] } } }
