{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/27400870"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "Citada por Patente citante Fecha de presentaci???n Fecha de publicaci???n Solicitante T???tuloUS7534708 *14 Jun 200619 May 2009Samsung Electronics Co., Ltd.Recessed-type field effect transistor with reduced body effectUS774232419 Feb 200822 Jun 2010Micron Technology, Inc.Systems and devices including local data lines and methods of using, making, and operating the sameUS780804220 Mar 20085 Oct 201" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.es" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/388465225"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/27400870" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/397891952"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/27400870"] } } }
