{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/prov/516270467"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/283961692" ] } },

    { "id" : "http://webisa.webdatacommons.org/283961692"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "The IC device of claim 16, each CMOS transistor being characterized by a ratio W/L, where W is a gate width and L is a gate length, wherein W/L of the two CMOS transistors in the first differential section is less than W/L of the two CMOS transistors in the second section." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/131843318"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/283961692"] } } }
