{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/prov/137300572"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/305580011" ] } },

    { "id" : "http://webisa.webdatacommons.org/305580011"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "The polishing method of the present invention is a method for polishing a semiconductor device having at least a layer made of copper and a layer made of a tantalum-containing compound, on a substrate, with the above-mentioned polishing composition, whereby in its CMP process, the stock removal rate of the copper layer will be high, the stock removal rate of the tantalum-containing compound layer" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.fr"] } } }
