{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/307255780"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "When the base 12 is a silicon substrate, a glass substrate, an epoxy substrate, a glass-epoxy substrate, a ceramic substrate, or the like, a method for forming the device hole can be suitably selected among physical-mechanical methods such as machining using a lathe or the like, and chemical methods including resist formation and etching, within a range in which the objects of the present inventio" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.fr" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/76701172"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/307255780" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/267662991"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/307255780" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/150555525"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/307255780"] } } }
