{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/317338418"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "lating the first semiconductor wafer through the gap to separate the semiconductor die.In another embodiment, the present invention is a method of making a semiconductor device comprising the steps of providing a first semiconductor wafer having a plurality of semiconductor die, creating a gap between the semiconductor die, depositing an insulating material in the gap, removing a portion of the in" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "freepatentsonline.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/137300572"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/317338418"] } } }
