{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/324187122"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "A protective film 103 of silicon oxide, silicon nitride or the like is formed with a thickness of 0.1 to 2.0 ??m on the resistance layer 105 between the wiring electrodes 104, and further on the film a cavitation-resistant layer 102 of tantalum or the like (thickness of 0.1 to 0.6 ??m) is formed, so that the resistance layer 105 is protected from various liquids such as the ink." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.fr" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/209429471"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/324187122"] } } }
