{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/332280559"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "Further, an embodiment of the present invention is a method for manufacturing a semiconductor device including the steps of: forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor layer over the gate insulating film, which contains indium, gallium, and zinc and overlaps with the gate electrode; forming buffer layers over th" ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.es" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/137300572"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/332280559"] } } }
