{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/385158710"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "The OPS-structure (see FIG. 2) of the above-exemplified IC frequency-doubled OPS-laser in accordance with the present invention is an example of the first-listed family of structures wherein GaAs transition layers between the QW and separator layers, alleviate the stress-difference which would otherwise exist between these layers." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/25166750"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/385158710"] } } }
