{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/394253458"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "In a region other than the ridge portion on the p-type GaAlN cladding layer 39, an n-type InGaN light confining layer 40 is selectively formed in a buried manner and, thereafter, a p-type GaN layer 41, and a p-type InGaN contact layer 42 are grown on the cladding layer 39 and the light confining layer 40." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/273973132"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/394253458"] } } }
