{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/401938214"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "The non-volatile memory device of claim 1 wherein the number of erase pulses used in the second stage is determined by N2=(A*N1)+B, wherein N2 is the maximum number of erase pulses used in the second stage, N1 is the number of erase pulses used in the first stage, A is a predetermined fraction and B is a minimum number of erase pulses to use in the second stage." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/516189422"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/401938214"] } } }
