{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/403645478"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "Conductive layers 308 in gates 328 and 332 may be formed of doped polysilicon, a refractory metal silicide such as tungsten, tantalum, or titanium silicides or other suitable materials such as a barrier/metal." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.es" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/60782533"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/403645478" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/58041783"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/403645478"] } } }
