{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/410013170"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "The manufacturing method according to claim 1, wherein the step of causing the deposition nuclei to grow is a heat treatment step which is performed in an atmosphere including at least one of hydrogen, helium, and argon and in which the wafer temperature is kept constant in a range of 850??? C. to 980??? C. for 0.5 to 60 minutes." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/181195012"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/410013170"] } } }
