{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/417414901"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "nes CorporationFin field effect transistor devices with self-aligned source and drain regionsUS7969776Apr 3, 2008Jun 28, 2011Micron Technology, Inc.Data cells with drivers and methods of making and operating the sameUS7981736Aug 30, 2010Jul 19, 2011Micron Technology, Inc.Systems and devices including multi-gate transistors and methods of using, making, and operating the sameUS8076229May 30," ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/388465225"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/417414901" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/397891952"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/417414901" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/253619819"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/417414901"] } } }
