{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/432034558"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "In this case, an insulating film such as SiO2 is formed on the upper surface of the ridge portion outside the crystal growth device, and the n-AlGaN first regrown low-temperature buffer layer 10 and the n-AlGaN current blocking layer 11 are then grown on the side surfaces of the ridge portion and on the flat portion of the p-AlGaN cladding layer 8 inside the crystal growth device." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "google.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/172553047"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/432034558" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/172870486"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/432034558"] } } }
