{ "items" : [
    { "id" : "http://webisa.webdatacommons.org/453085203"
      "properties" : {
        "http://www.w3.org/1999/02/22-rdf-syntax-ns#type" : [ "http://www.w3.org/ns/prov#Entity" ] ,
        "http://www.w3.org/ns/prov#value" : [ "The devices of FIGS. 5A and 5B have a dual gate structure having a flatchannel;FIGS. 6A and 6B are diagrams showing some other examples of a structure in which a 1T-DRAM cell with a non-volatile function is implemented according to the present invention." ] ,
        "http://www.w3.org/ns/prov#wasQuotedFrom" : [ "patentgenius.com" ] } },

    { "id" : "http://webisa.webdatacommons.org/prov/319486225"
      "properties" : {
        "http://www.w3.org/ns/prov#wasDerivedFrom" : [ "http://webisa.webdatacommons.org/453085203"] } } }
